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Now showing items 1-55
Diffusion (16)
Ion implantation (6)
Rutherford backscattering spectrometry (RBS) (5)
Silicon carbide (SiC) (5)
Glassy carbon (4)
Radiation damage (4)
Silicon carbide (4)
Raman spectroscopy (3)
Scanning electron microscopy (SEM) (3)
SHI irradiation (3)
Glassy carbon (GC) (2)
Indium (2)
Polycrystalline SiC (2)
Raman (2)
Rutherford backscattering spectroscopy (RBS) (2)
Swift heavy ion (SHI) (2)
After-heat treatment (1)
Annealing (1)
Cadmium (Cd) (1)
Carbon structures (1)
Carbon substrates (1)
Cesium -- Diffusion rate (1)
Diffusion behavior (1)
Doping (1)
Europium (Eu) (1)
Fick diffusion equation (1)
Fission products (1)
Gaussian profile (1)
Glass (1)
Grazing incidence X-ray diffraction (GIXRD) (1)
Heat treatment (1)
Implantation (1)
Implanted profile (1)
In situ RBS (1)
Isochronal and isothermal annealing (1)
Isochronal annealing (1)
Isothermal annealing (1)
Microstructural changes (1)
Migration (1)
Pd (1)
Pebble bed modular reactor (PBMR) (1)
Polycrystalline (1)
RBS in a channelling mode (RBS-C) (1)
Reactions (1)
Recrystallization (1)
Room temperature (RT) (1)
Rubidium (1)
Rutherford backscattering spectrometry (RBS) (1)
SEM micrographs (1)
SiC (1)
Substrates (1)
Surface roughness (1)
Swift heavy ions (SHI) (1)
Very high temperature gas cooled reactors (VHTGRs) (1)
Zirconium (Zr) (1)
Now showing items 1-55
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