Browsing Research Articles (Physics) by Subject "n-Type 4H-SiC"

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Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density

Paradzah, Alexander Tapera; Auret, Francois Danie; Legodi, Matshisa Johannes; Omotoso, Ezekiel; Diale, M. (Mmantsae Moche) (Elsevier, 2015-09)

Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with about ten orders of magnitude between 50 V and +2 V. The ideality factor was obtained as 1.05 which signifies the ...
Electrical characterization of high energy electron irradiated Ni/4H-SiC Schottky barrier diodes

Paradzah, Alexander Tapera; Omotoso, Ezekiel; Legodi, Matshisa Johannes; Auret, Francois Danie; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche) (Springer, 2016-08)

The effect of high energy electron (HEE) irradiation on Ni/4H-SiC Schottky barrier diodes was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Electron irradiation was ...

Now showing items 1-2 of 2

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