Browsing Research Articles (Physics) by Subject "Wide band gap semiconductors"

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Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide

Gora, V.E.; Chawanda, A.; Nyamhere, C.; Auret, Francois Danie; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, Ezekiel; Danga, Helga Tariro; Tunhuma, Shandirai Malven (Elsevier, 2018-04)

We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300–800 K temperature range. Results extracted from I-V ...
Defects induced by solid state reactions at the tungsten-silicon carbide interface

Tunhuma, Shandirai Malven; Diale, M. (Mmantsae Moche); Legodi, Matshisa Johannes; Nel, Jacqueline Margot; Thabethe, Thabsile Theodora; Auret, Francois Danie (American Institute of Physics Inc., 2018-01-18)

Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally ...
Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

Igumbor, Emmanuel; Olaniyan, Okikiola; Mapasha, Refilwe Edwin; Danga, Helga Tariro; Omotoso, Ezekiel; Meyer, Walter Ernst (Elsevier, 2019-01)

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