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Browsing Research Articles (Physics) by Author "Das, A.G.M."

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Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Mtangi, Wilbert; Odendaal, R.Q. (Quintin); Carr, Alan (Elsevier, 2009)

Please read abstract in article
Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

Nyamhere, Cloud; Das, A.G.M.; Auret, Francois Danie; Chawanda, Albert; Pineda-Vargas, C.A.; Venter, Andre (Elsevier, 2011-08)

Please read the abstract in the article.
A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

Mtangi, Wilbert; Schmidt, Matthias; Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Diale, M. (Mmantsae Moche); Nel, Jacqueline Margot; Das, A.G.M.; Ling, F.C.C.; Chawanda, Albert (American Institute of Physics, 2013-05-22)

We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygen ambient at different temperatures. ...
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...

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Browsing Research Articles (Physics) by Author "Das, A.G.M."

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