Browsing Research Articles (Electrical, Electronic and Computer Engineering) by Author "Bellotti, Enrico"

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Photonic transitions (1.4 eV–2.8 eV) in silicon p(+) np(+) injection-avalanche CMOS LEDs as function of depletion layer profiling and defect engineering

Snyman, Lukas Willem; Du Plessis, Monuko; Bellotti, Enrico (Institute of Electrical and Electronics Engineers, 2010-06)

p+ np+ CMOS Si LED structures were modeled in order to investigate the effect of various depletion layer profiles and defect engineering on the photonic transitions in the 1.4–2.8 eV, 450–750 nm regime. Modeling shows that ...
Spectral characteristics of hot electron electroluminescence in silicon avalanching junctions

Du Plessis, Monuko; Venter, Petrus Johannes; Bellotti, Enrico (Institute of Electrical and Electronics Engineers, 2013-07)

The emission spectra of avalanching n+p junctions manufactured in a standard 350-nm CMOS technology with no process modifications are measured over a broad spectral range and at different current levels. In contrast to the ...
Temperature characteristics of hot electron electroluminescence in silicon

Du Plessis, Monuko; Wen, Hanqing; Bellotti, Enrico (Optical Society of America, 2015-05)

Emission spectra of avalanching n+p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. ...

Now showing items 1-3 of 3

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