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Scanning electron microscopy (SEM) (22)
Rutherford backscattering spectrometry (RBS) (17)
Diffusion (16)
Raman spectroscopy (13)
X-ray diffraction (XRD) (12)
Swift heavy ion (SHI) (11)
Luminescence (9)
Silicon carbide (SiC) (9)
Ion implantation (8)
Transmission electron microscopy (TEM) (7)
Annealing (6)
Glassy carbon (6)
Radiation damage (6)
Silicon carbide (6)
Grazing incidence X-ray diffraction (GIXRD) (5)
Irradiation (5)
SiC (5)
Atomic force microscopy (AFM) (4)
Implantation (4)
Microstructure (4)
Rutherford backscattering spectroscopy (RBS) (4)
Sol–gel (4)
Chemical vapour deposition (CVD) (3)
Growth rate (3)
Heavy ions (3)
Polycrystalline SiC (3)
Reactions (3)
Rubidium (3)
SHI irradiation (3)
Tungsten (3)
Annealing time (AT) (2)
Carbon substrates (2)
CIE (2)
Citrate sol-gel (2)
Citrate sol–gel (2)
Crystallite size (2)
De-trapping (2)
Deep level transient spectroscopy (DLTS) (2)
Elastic recoil detection analysis (ERDA) (2)
Energy dispersive x-ray spectroscopy (EDS) (2)
Energy gap (2)
Glassy carbon (GC) (2)
Heavy Ion ERDA (2)
Indium (2)
Interface (2)
Ion bombardment (2)
Irradiated samples (2)
MgAl2O4 (2)
Nuclear materials (2)
Photoluminescence (2)
Raman (2)
Rutherford backscattering spectrometry (RBS) (2)
Silicon compounds (2)
Sol-gel (2)
Surface morphology (2)
Surface roughness (2)
Thin film (2)
Tungsten (W) (2)
Xe ions (2)
Zirconium carbide (2)
4H-SiC (1)
A-carbon (1)
After-heat treatment (1)
Aluminum compounds (1)
Alx moles (1)
Amorphization (1)
Annealing temperatures (1)
Argon (1)
Atmospheric pressure (1)
Atomic compositions (1)
Biaxial stress (1)
Binary collision approximations (1)
Boundary defects (1)
Boundary layer flow (1)
Boundary layers (1)
Bubbles (1)
Cadmium (Cd) (1)
Carbide (1)
Carbides (1)
Carbon (1)