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Diffusion (27)
Glassy carbon (6)
Ion implantation (6)
Rutherford backscattering spectrometry (RBS) (6)
Radiation damage (5)
Scanning electron microscopy (SEM) (5)
Silicon carbide (5)
Silicon carbide (SiC) (5)
Annealing (3)
Raman spectroscopy (3)
Rutherford backscattering spectroscopy (RBS) (3)
SHI irradiation (3)
Glassy carbon (GC) (2)
Indium (2)
Interfacial reaction (2)
Phase formation (2)
Polycrystalline SiC (2)
Raman (2)
Swift heavy ion (SHI) (2)
6H-SiC (1)
Ab initio (1)
After-heat treatment (1)
Anneal (1)
Binary systems (1)
Cadmium (Cd) (1)
Carbon -- Heat treatment (1)
Carbon structures (1)
Carbon substrates (1)
Cesium -- Diffusion rate (1)
Cesium ions -- Heat treatment (1)
Charge state (1)
Co-implantation (1)
Compound layers (1)
Critical thickness (1)
Deep level transient spectroscopy (DLTS) (1)
Defect (1)
Defects (1)
Density functional theory (DFT) (1)
Diffusion behavior (1)
Dopants (1)
Doping (1)
Europium (Eu) (1)
Fick diffusion equation (1)
Fission products (1)
Formation energy (1)
Gaussian profile (1)
Germanium (1)
Germanium (Ge) (1)
Glass (1)
Glassy Carbon (SIGRADURÒ) (1)
Grazing incidence X-ray diffraction (GIXRD) (1)
Growth kinetics (1)
Heat treatment (1)
Heyd, Scuseria, and Ernzerhof (HSE06) (1)
Implantation (1)
Implanted profile (1)
Implications (1)
In situ RBS (1)
Inductively coupled plasma (ICP) (1)
Ion Implantation (1)
Isochronal and isothermal annealing (1)
Isochronal annealing (1)
Isothermal annealing (1)
Laplace deep level transient spectroscopy (L-DLTS) (1)
Microstructural changes (1)
Microstructure evolution (1)
Migration (1)
Migration behaviour (1)
Nickel (Ni) (1)
Pd (1)
Pebble bed modular reactor (PBMR) (1)
Polycrystalline (1)
Radiation-induced vacancy (1)
Rare earth (RE) (1)
RBS in a channelling mode (RBS-C) (1)
Reactions (1)
Real-time Rutherford backscattering spectrometry (1)
Recrystallization (1)
Room temperature (RT) (1)
Rubidium (1)
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