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Deep level transient spectroscopy (DLTS) (10)
Annealing (7)
Barrier height (6)
Deep-level transient spectroscopy (DLTS) (6)
Defects (6)
Schottky contacts (6)
4H-SiC (4)
AlGaN (4)
Diodes, Schottky-barrier (4)
Deep level transient spectroscopy (3)
Gaussian distribution (3)
High energy electron (HEE) (3)
Irradiation (3)
Laplace DLTS (3)
Alpha-particle irradiation (2)
Annealing of crystals (2)
Barrier inhomogeneities (2)
Current voltage (2)
Defect (2)
Electrically active defects (2)
Electron beam exposure (EBE) (2)
Ideality factor (2)
n-Type 4H-SiC (2)
Richardson constant (2)
Schottky barrier diodes (2)
Schottky diodes (2)
Schottky photodiode (2)
Schottky-barrier diodes (2)
Silicon carbide (2)
Silicon carbide (SiC) (2)
Surface conduction (2)
Thermionic emission (2)
Zinc oxide (2)
4H–SiC (1)
4H–silicon carbide (1)
Agglomeration (1)
Alpha particle irradiation (1)
Alpha-particles (1)
Annealing conditions (1)
Atomic force microscopy (AFM) (1)
Band gap states (1)
Binary collision approximations (1)
Capacitance (1)
Capacitance meters (1)
Capacitance voltage measurements (1)
Capacitance–voltage (C–V) (1)
Carrier concentration (1)
Carrier removal rate (1)
Cs implantation (1)
Current–voltage (I–V) (1)
Current–voltage–temperature (1)
Deep levels (1)
Defects induced (1)
Deposition (1)
Depth profile (1)
Depth profiling (1)
Detectors (1)
Diodes, Schottky-barrier -- Heat treatment (1)
Discrete breathers (1)
DLTS (1)
EL2 defect (1)
Electric conductivity (1)
Electrical characterization (1)
Electrical characterization and high energy electron irradiation (1)
Electron beam deposition (EBD) (1)
Electron beam deposition system (1)
Electron beam exposure (1)
Electron beams (1)
Electron irradiation (1)
Emission characteristics (1)
Free carrier removal rate (1)
GaAs (1)
Gallium arsenide (1)
Gallium Nitride (GaN) (1)
Gallium nitride (GaN) (1)
GaN (1)
Germanium (1)
Germanium diodes (1)
Hall effect (1)
High-temperature annealing (1)
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