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Formation of chemical compound layer at the interface of initial substances A and B with dominance of diffusion of the A atoms
Selyshchev, Pavel
;
Akintunde, S.O. (Samuel)
(
World Academy of Science, Engineering and Technology
,
2014
)
Unexpected properties of the inductively coupled plasma induced defect in germanium
Coelho, Sergio M.M.
;
Auret, Francois Danie
;
Janse van Rensburg, Pieter Johan
;
Nel, J.M.
(
Elsevier
,
2014-04
)
Influence of radiation damage on xenon diffusion in silicon carbide
Friedland, Erich Karl Helmuth
;
Gärtner, K.
;
Hlatshwayo, Thulani Thokozani
;
Van der Berg, Nic (Nicolaas George)
;
Thabane, Tebello T.
(
Elsevier
,
2014-08
)
Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles
Munthali, Kinnock V.
;
Theron, C.C. (Chris)
;
Auret, Francois Danie
;
Coelho, Sergio M.M.
;
Prinsloo, Linda Charlotta
;
Njoroge, Eric Gitau
(
Elsevier
,
2014-05
)
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Author
Auret, Francois Danie (2)
Coelho, Sergio M.M. (2)
Akintunde, S.O. (Samuel) (1)
Friedland, Erich Karl Helmuth (1)
Gärtner, K. (1)
Hlatshwayo, Thulani Thokozani (1)
Janse van Rensburg, Pieter Johan (1)
Munthali, Kinnock V. (1)
Nel, J.M. (1)
Njoroge, Eric Gitau (1)
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Diffusion (4)
Anneal (1)
Binary systems (1)
Compound layers (1)
Deep level transient spectroscopy (DLTS) (1)
Defect (1)
Germanium (1)
Growth kinetics (1)
Implications (1)
Inductively coupled plasma (ICP) (1)
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2014 (4)
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