Abrass, Hameda A.; Theron, C.C. (Chris); Njoroge, Eric Gitau; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Yan, X- L.; Terblans, J.J.
(Elsevier, 2015-09)
The reaction between a thin film (126 nm) of Co and Si has been studied at 450 C for 24 h under high
vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between
Co and Si, Co2Si ...
