Browsing Physics by Author "Wesch, W."

Browsing Physics by Author "Wesch, W."

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  • Damage formation and optical absorption in neutron irradiated SiC 
    Wendler, E.; Bierschenk, Th.; Felgentrager, F.; Sommerfeld, J.; Wesch, W.; Alber, D.; Bukalis, G.; Prinsloo, Linda Charlotta; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B. (Elsevier, 2012-09)
    The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration ...
  • Damage formation in Ge during Ar+ and He+ implantation at 15 K 
    Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot (Elsevier, 2009)
    Read abstract in article.
  • Heat treatment of glassy carbon implanted with cesium at room and high temperatures 
    Langa, Dolly Frans; Van der Berg, Nic (Nicolaas George); Friedland, Erich Karl Helmuth; Malherbe, Johan B.; Botha, A.J.; Chakraborty, P.; Wendler, E.; Wesch, W. (Elsevier, 2012-02-15)
    The effect of annealing temperature on the surface morphology and on the diffusion of cesium ions implanted into glassy carbon (Sigradur® G) is reported. The samples were implanted with 360 keV cesium ions to a fluence of ...
  • Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding 
    Friedland, Erich Karl Helmuth; Van der Berg, Nic (Nicolaas George); Malherbe, Johan B.; Hancke, J.J. (Jacobus Johannes); Barry, J.; Wendler, E.; Wesch, W. (Elsevier, 2011-03)
    Please read abstract in article.
  • Radiation damage in ZnO ion implanted at 15 K 
    Wendler, E.; Bilani, O.; Gartner, K.; Wesch, W.; Hayes, M.; Auret, Francois Danie; Lorenz, K.; Alves, E. (Elsevier, 2009)
    Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by ...
  • SEM analysis of ion implanted SiC 
    Malherbe, Johan B.; Van der Berg, Nic (Nicolaas George); Botha, A.J.; Friedland, Erich Karl Helmuth; Hlatshwayo, Thulani Thokozani; Kuhudzai, Remeredzai Joseph; Wendler, E.; Wesch, W.; Chakraborty, P.; Da Silveira, E.F. (Elsevier, 2013-11)
    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive ...