Auret, Francois Danie; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Janse van Rensburg, Pieter Johan; Song, S.F.; Temst, K.; Vantomme, A.
(Trans Tech, 2011-03)
Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then
annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were
used to characterise the ion implantation ...