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Browsing Physics by Author "Van Schalkwyk, Louwrens"
Now showing items 1-7 of 7
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Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Auret, Francois Danie; Nel, Jacqueline Margot; Ngoepe, Phuti Ngako Mahloka; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)Intrinsically solar-blind ultraviolet (UV) AlGaN-based Schottky photodiodes were fabricated using Iridium oxide (IrO2) as the Schottky barrier material. The Ir Schottky contacts were annealed at 700 °C under O2 ambient and ...
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Van Schalkwyk, Louwrens (University of Pretoria, 2015)Several applications require the detection of terrestrial UV-C signatures. Efficiency, compactness, environmentally friendly and cost-effective requirements for UV-C–detectors resulted in a research interest in wide-bandgap ...
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Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Nel, J.M.; Auret, Francois Danie; Ngoepe, Phuti Ngako Mahloka (Elsevier, 2014-04)Please read abstract in the article.
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Van Schalkwyk, Louwrens; Meyer, Walter Ernst; Nel, Jacqueline Margot; Auret, Francois Danie (Suid Afrikaanse Akademie vir Wetenskap & Kuns, 2011)Spectral and electrical characteristion of ultraviolet (UV) sensitive photodiodes requires a calibrated optoelectronic system. For spectral characteristion, the irradiance of the UV light source, after the light passed ...
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Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Van Schalkwyk, Louwrens (Elsevier, 2014-04)In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al0.35Ga0.65N. The effects of inserting Ir between Ni and Au are of particular interest. ...
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Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Auret, Francois Danie; Van Schalkwyk, Louwrens (Elsevier, 2012-06)Please read abstract in the article.
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Mtangi, Wilbert; Auret, Francois Danie; Chawanda, Albert; Jansen van Rensburg, P. J.; Coelho, Sergio M.M.; Nel, J.M.; Diale, M. (Mmantsae Moche); Van Schalkwyk, Louwrens; Nyamhere, Cloud (Elsevier, 2012-10)Current–voltage (IV) and capacitance–voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the ...
Now showing items 1-7 of 7