Browsing Physics by Author "Temst, K."

Browsing Physics by Author "Temst, K."

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  • Electrical characterization of metastable defects introduced in GaN by eu-ion implantation 
    Auret, Francois Danie; Meyer, Walter Ernst; Diale, M. (Mmantsae Moche); Janse van Rensburg, Pieter Johan; Song, S.F.; Temst, K.; Vantomme, A. (Trans Tech, 2011-03)
    Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation ...