Browsing Physics by Author "Pipeleers, B."

Browsing Physics by Author "Pipeleers, B."

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  • Defect production in strained p-type Si1-xGex by Er implantation 
    Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M. (American Institute of Physics, 2011-01)
    Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...