Chawanda, Albert; Nel, Jacqueline Margot; Auret, Francois Danie; Mtangi, Wilbert; Nyamhere, Cloud; Diale, M. (Mmantsae Moche); Leach, Lindsay Josephine
(Korean Physical Society, 2010-12)
We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/n-
Ge (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of
Ni on n-Ge (100). The ...
