- UPSpace Home
- →
- Natural and Agricultural Sciences
- →
- Physics
- →
- Browsing Physics by Author
JavaScript is disabled for your browser. Some features of this site may not work without it.
Browsing Physics by Author "Coelho, Sergio M.M."
Now showing items 1-20 of 31
-
Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Janse van Rensburg, J.P.; Meyer, Walter Ernst; Coelho, Sergio M.M.; Kolkovsky, V.I. (American Institute of Physics, 2012-03-08)Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a ...
-
Nyamhereme, C.; Venter, Andre; Auret, Francois Danie; Coelho, Sergio M.M.; Murape, D.M. (American Institute of Physics, 2012-02-29)Bulk antimony (Sb) doped germanium (n-Ge) samples with doping concentrations ranging between 7.0 1014 cm 3 and 2.5 1015 cm 3 were exposed to a dc-hydrogen or helium plasma. Hydrogen exposure resulted in the introduction ...
-
Kassier, Gunther Horst; Haupt, K.; Erasmus, N.; Rohwer, E.G.; Von Bergmann, H.M.; Schwoerer, H.; Coelho, Sergio M.M.; Auret, Francois Danie (American Institute of Physics (AIP), 2010-10)We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast ...
-
Mtangi, Wilbert; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Coelho, Sergio M.M.; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Chawanda, Albert (American Institute of Physics, 2011-11)A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and ...
-
Pienaar, J.; Meyer, Walter Ernst; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2012-05)Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) ...
-
Coelho, Sergio M.M.; Auret, Francois Danie; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively ...
-
Nyamhere, Cloud; Venter, Andre; Murape, D.M.; Auret, Francois Danie; Coelho, Sergio M.M.; Botha, J.R. (Elsevier, 2012-08)Bulk antimony doped germanium (n-Ge) has been exposed to a dc-hydrogen plasma. Capacitance-voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ˜ a 1.5 orders of magnitude ...
-
Roro, K.T.; Janse van Rensburg, Pieter Johan; Auret, Francois Danie; Coelho, Sergio M.M. (Elsevier, 2009)Read abstract in article.
-
Chawanda, Albert; Coelho, Sergio M.M.; Auret, Francois Danie; Mtangi, C.; Nyamhere, J.M.; Nel, Jacqueline Margot; Diale, M. (Mmantsae Moche) (Elsevier, 2012-02)Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and ...
-
Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Paradzah, Alexander Tapera; Diale, M. (Mmantsae Moche); Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Ngoepe, Phuti Ngako Mahloka (Elsevier, 2015-12)Current–voltage, capacitance–voltage and conventional deep level transient spectroscopy at temperature ranges from 40 to 300 K have been employed to study the influence of alpha-particle irradiation from an 241Am source ...
-
Mtangi, Wilbert; Auret, Francois Danie; Diale, M. (Mmantsae Moche); Coelho, Sergio M.M.; Legodi, Matshisa Johannes; Janse van Rensburg, Pieter Johan; Nel, Jacqueline Margot (American Institute of Physics, 2012-05-03)Effects of annealing ZnO in hydrogen, oxygen, and argon have been investigated using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements. Current-voltage (IV) measurements indicate a decrease ...
-
Danga, Helga Tariro; Auret, Francois Danie; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche) (Elsevier, 2016-01)The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, ...
-
Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Coelho, Sergio M.M.; Meyer, Walter Ernst; Decoster, S.; Matias, V.S.; Vantomme, A.; Smeets, D. (Elsevier, 2007-04)Please open article to read abstract
-
Omotoso, Ezekiel; Meyer, Walter Ernst; Coelho, Sergio M.M.; Diale, M. (Mmantsae Moche); Ngoepe, Phuti Ngako Mahloka; Auret, Francois Danie (Elsevier, 2016-08)We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements ...
-
Electrical characterization of defects introduced during metallization processes in n-type germanium Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
-
Coelho, Sergio M.M.; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Nel, Jacqueline Margot (American Institute of Physics, 2013)Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had ...
-
Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Coelho, Sergio M.M.; Ngoepe, Phuti Ngako Mahloka (Trans Tech Publications, 2016)Deep level transient spectroscopy (DLTS) was used to characterize the defects introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation conditions. This was done by heating a tungsten source ...
-
Coelho, Sergio M.M. (University of Pretoria, 2014)The origins and identity of process induced defects in semiconductors has proven to be a particularly difficult problem to solve. Germanium, a semiconductor once again at the forefront of device technology, has played a ...
-
Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst (Elsevier, 2009)Please read abstract in article.
-
Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Coelho, Sergio M.M.; Meyer, Walter Ernst (American Institute of Physics, 2012-05-01)Inductively coupled Ar plasma etching of n-type (Si doped) Gallium Arsenide (GaAs) introduces several electron traps, Ec – 0.04 eV (labelled E10), Ec – 0.19 eV, Ec – 0.31 eV, Ec – 0.53 eV, and Ec – 0.61 eV (behaving like ...
Now showing items 1-20 of 31