Browsing Physics by Author "Barnard, Abraham Willem"

Browsing Physics by Author "Barnard, Abraham Willem"

Sort by: Order: Results:

  • The effect of palladium deposition on electrically active defects in irradiated silicon 
    Barnard, Abraham Willem (University of Pretoria, 2023-12)
    DLTS was used to study the effect of resistive physical vapour deposition of Pd Schottky contacts on the defects observed in an n-type Si substrate that was irradiated before deposition (“pre-irradiated”) and compared to ...
  • Electrical characterization of alpha-particle irradiation-induced defects in germanium 
    Barnard, Abraham Willem (University of Pretoria, 2017)
    Recent advances in semiconductor growth techniques have led to the production of high quality Ge that plays a vital role in the fabrication of electrical devices. Germanium (Ge) is mainly used as a detector material being ...
  • Investigating the impact of physical vapour deposition of palladium on electron-irradiated silicon substrates 
    Barnard, Abraham Willem; Auret, F.D. (Francois Danie); Meyer, W.E. (Walter Ernst) (Elsevier, 2024-07)
    This study reports on the effect of resistive physical vapour deposition of Pd Schottky contacts on the defects observed in an irradiated n-type Si substrate. Deep-level transient spectroscopy (DLTS) was used in order to ...
  • Ti- and Fe-related charge transition levels in beta-Ga2O3 
    Zimmermann, Christian; Frodason, Ymir Kalmann; Barnard, Abraham Willem; Varley, Joel Basile; Irmscher, Klaus; Galazka, Zbigniew; Karjalainen, Antti; Meyer, Walter Ernst; Auret, Francois Danie; Vines, Lasse (American Institute of Physics, 2020-02-18)
    Deep-level transient spectroscopy measurements on b-Ga2O3 crystals reveal the presence of three defect signatures labeled E2a; E2b, and E3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction ...