Archilla, J.F.R.; Coelho, Sergio M.M.; Auret, Francois Danie; Dubinko, V.I.; Hizhnyakov, V.
(Elsevier, 2015-03)
Ions arriving at a semiconductor surface with very low energy (2–8 eV) are interacting with defects deep inside the semiconductor. Several different defects were removed or modified in Sb-doped germanium, of which the ...