Microstructural and surface characterization of thin gold films on n-Ge (111)

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dc.contributor.author Nel, Jackie M. (Jacqueline Margot)
dc.contributor.author Chawanda, Albert
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Jordaan, W.
dc.contributor.author Odendaal, R.Q.
dc.contributor.author Hayes, M.
dc.contributor.author Coelho, Sergio M.M.
dc.date.accessioned 2009-11-11T06:04:57Z
dc.date.available 2009-11-11T06:04:57Z
dc.date.issued 2009
dc.description.abstract Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600°C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectroscopy and time of flight secondary ion mass spectroscopy (TOF-SIMS). For temperatures below the eutectic temperature the distribution of both the gold and the germanium on the surface are uniform. Above the eutectic temperature, the formation of gold rich islands on the surface of the Germanium were observed. These changes in the microstructure were found to correspond to changes in the electrical characteristics of the diodes. en_US
dc.identifier.citation J.M.Nel, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.035 en_US
dc.identifier.issn 0921-4526
dc.identifier.other 10.1016/j.physb.2009.09.035
dc.identifier.uri http://hdl.handle.net/2263/11796
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights Elsevier en_US
dc.subject Schottky en
dc.subject Characterization en
dc.subject.lcsh Germanium en
dc.subject.lcsh Gold films en
dc.title Microstructural and surface characterization of thin gold films on n-Ge (111) en_US
dc.type Postprint Article en_US


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