Damage formation in Ge during Ar+ and He+ implantation at 15 K

Hayes, M.; Schroeter, A.; Wendler, E.; Wesch, W.; Auret, Francois Danie; Nel, Jacqueline Margot

dc.contributor.author	Hayes, M.
dc.contributor.author	Schroeter, A.
dc.contributor.author	Wendler, E.
dc.contributor.author	Wesch, W.
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Nel, Jacqueline Margot
dc.date.accessioned	2009-11-11T06:04:24Z
dc.date.available	2009-11-11T06:04:24Z
dc.date.issued	2009
dc.description.abstract	Read abstract in article.	en_US
dc.identifier.citation	M.Hayes, et al., Physica B (2009), doi:10.1016/j.physb.2009.09.021	en_US
dc.identifier.isbn	10.1016/j.physb.2009.09.021
dc.identifier.issn	0921-4526
dc.identifier.uri	http://hdl.handle.net/2263/11794
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Elsevier	en_US
dc.subject	Implantation	en
dc.subject	RBS	en
dc.subject	Channelling	en
dc.subject	Ge	en
dc.subject.lcsh	Ions -- Defects	en
dc.title	Damage formation in Ge during Ar+ and He+ implantation at 15 K	en_US
dc.type	Postprint Article	en_US