Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

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dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Myburg, G.
dc.contributor.author Janse van Rensburg, P.J. (Pieter Johan)
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.date.accessioned 2009-11-03T07:43:33Z
dc.date.available 2009-11-03T07:43:33Z
dc.date.issued 2009
dc.description.abstract Please read abstract in article. en_US
dc.identifier.citation F.D.Auret,etal.,PhysicaB(2009),doi:10.1016/j.physb.2009.09.028 en_US
dc.identifier.issn 0921-4526
dc.identifier.other 10.1016/j.physb.2009.09.028
dc.identifier.uri http://hdl.handle.net/2263/11683
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights Elsevier en_US
dc.subject Ar plasma etching en
dc.subject DLTS en
dc.subject Annealing en
dc.subject Defects en
dc.subject.lcsh Germanium en
dc.subject.lcsh Deep level transient spectroscopy en
dc.subject.lcsh Plasma etching en
dc.title Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium en_US
dc.type Postprint Article en_US


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