Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Myburg, G.; Janse van Rensburg, Pieter Johan; Meyer, Walter Ernst

dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Myburg, G.
dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.contributor.author	Meyer, Walter Ernst
dc.date.accessioned	2009-11-03T07:43:33Z
dc.date.available	2009-11-03T07:43:33Z
dc.date.issued	2009
dc.description.abstract	Please read abstract in article.	en_US
dc.identifier.citation	F.D.Auret,etal.,PhysicaB(2009),doi:10.1016/j.physb.2009.09.028	en_US
dc.identifier.issn	0921-4526
dc.identifier.other	10.1016/j.physb.2009.09.028
dc.identifier.uri	http://hdl.handle.net/2263/11683
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Elsevier	en_US
dc.subject	Ar plasma etching	en
dc.subject	DLTS	en
dc.subject	Annealing	en
dc.subject	Defects	en
dc.subject.lcsh	Germanium	en
dc.subject.lcsh	Deep level transient spectroscopy	en
dc.subject.lcsh	Plasma etching	en
dc.title	Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium	en_US
dc.type	Postprint Article	en_US