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Browsing by Supervisor "Auret, F.D. (Francois Danie)"
Now showing items 1-20 of 25
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(University of Pretoria, 2007-08-13)A fully automated Temperature Dependent Hall (TDH) measurement setup has been assembled for the purposes of this study. This TDH setup is capable of measuring samples in the 20 K to 370 K temperature range. Sample sizes ...
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(University of Pretoria, 2010-05-26)Defects in semiconductors are crucial to device operation, as they can either be beneficial or detrimental to the device operation depending on the application. For efficient devices it is important to characterize the ...
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(University of Pretoria, 2019)Defects in semiconductors have been studied extensively over the past few decades. The advent of highly sensitive techniques such as deep-level transient spectroscopy (DLTS) and Laplace DLTS (LDLTS) has resulted in more ...
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(University of Pretoria, 2015)Several applications require the detection of terrestrial UV-C signatures. Efficiency, compactness, environmentally friendly and cost-effective requirements for UV-C–detectors resulted in a research interest in wide-bandgap ...
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(University of Pretoria, 2010)Metal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor ...
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(University of Pretoria, 2014)Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and high electric field ...
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(University of Pretoria, 2006-11-30)The electrically active defects introduced in GaAs by electron beam deposition (EB) of Ta were characterised. The effect of electron beam deposition on the electrical properties of GaAs was evaluated by current-voltage ...
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(University of Pretoria, 2017)Recent advances in semiconductor growth techniques have led to the production of high quality Ge that plays a vital role in the fabrication of electrical devices. Germanium (Ge) is mainly used as a detector material being ...
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(University of Pretoria, 2017)First discovered by E.T. Hall in 1879 [1], the Hall Effect is a phenomena that explains the behaviour of a material placed in a magnetic field and a current is allowed to flow through the material, producing an electric ...
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(University of Pretoria, 2016)Gallium arsenide (GaAs) technology leads the implementation of high frequency devices with superior performance. A vast number of optoelectronic applications are based on the material owing to its direct and wide bandgap. ...
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(University of Pretoria, 2019)In this study, we investigated defects introduced in n-GaAs with different carrier densities by electron irradiation and sputter deposition by means of conventional deep level transient spectroscopy (DLTS) as well as high ...
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(University of Pretoria, 2014)The origins and identity of process induced defects in semiconductors has proven to be a particularly difficult problem to solve. Germanium, a semiconductor once again at the forefront of device technology, has played a ...
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(University of Pretoria, 2013-04-24)A study of defects in semiconductors is vital as defects tend to influence device operation by modifying their electrical and optoelectronic properties. This influence can at times be desirable in the case of fast switching ...
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(University of Pretoria, 2015)Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature ...
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(University of Pretoria, 2019)Silicon carbide has become an important material in the implementation of next generation photonics. It harbors the silicon vacancy (VSi) which can be transformed to a carbon antisite-vacancy pair (CSiVC) defect through ...
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(University of Pretoria, 1992)Advances in growth techniques for semiconductor microstructures have led to a demand for more sophisticated characterization techniques, suitable for more accurate characterization of microstructures. Capacitance-voltage ...
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(University of Pretoria, 2015)Metal deposition on Si has effects that may be detrimental to device operation such as diffusion, Fermi level pinning and silicide formation. Silicide formation is dependent on type of metal and temperature at which ...
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(University of Pretoria, 2010-05-26)The electrical properties of ZnO and contacts to ZnO have been investigated using different techniques. Temperature dependent Hall (TDH) effect measurements have been used to characterize the as-received melt grown ZnO ...
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(University of Pretoria, 2016)The electrical properties of ZnO and Schottky contacts to ZnO have been investigated using different techniques. Good rectifying Schottky contact has been fabricated on ZnO, after treating the samples with boiling hydrogen ...
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(University of Pretoria, 1994)The beginning of the space-age in the 1950s led to interest in the effects of radiation on semiconductors. The systematic investigation of defect centres in semiconductors began in earnest over 30 years ago. In addition ...
Now showing items 1-20 of 25