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Browsing by Subject "Electron beams"

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Comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

Mtangi, Wilbert; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Coelho, Sergio M.M.; Legodi, Matshisa Johannes; Meyer, Walter Ernst; Chawanda, Albert (American Institute of Physics, 2011-11)

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and ...
Defect production in strained p-type Si1-xGex by Er implantation

Mamor, M.; Pipeleers, B.; Auret, Francois Danie; Vantomme, M. (American Institute of Physics, 2011-01)

Strained p-Si1−xGex (x = 5.3%, 10.2%, and 15.4%) was irradiated at room temperature with 160 keV 166Er2+ ions to a fluence of 1×1010 or 3×1013 Er/cm2. The defects induced by ion implantation were investigated experimentally ...
Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

Chawanda, Albert; Nyamhere, Cloud; Auret, Francois Danie; Nel, Jacqueline Margot; Mtangi, Wilbert; Diale, M. (Mmantsae Moche) (Elsevier, 2012-05)

Please read abstract in the article.
Electrical characterization of defects introduced during metallization processes in n-type germanium

Auret, Francois Danie; Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan; Nyamhere, Cloud; Meyer, Walter Ernst (Elsevier, 2009)

We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality ...
Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Nyamhere, Cloud; Chawanda, Albert; Das, A.G.M.; Auret, Francois Danie; Hayes, M. (Elsevier, 2007-12-15)

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. ...

Browsing by Subject "Electron beams"

Browsing by Subject "Electron beams"

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