Browsing by Subject "Electron beam exposure"

Now showing items 1-3 of 3

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Tunhuma, Shandirai Malven; Auret, Francois Danie; Nel, Jacqueline Margot; Omotoso, Ezekiel; Danga, Helga Tariro; Igumbor, Emmanuel; Diale, M. (Mmantsae Moche) (Elsevier, 2017-10)

We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type gallium arsenide by electron beam exposure prior to Schottky ...
Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure

Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Coelho, Sergio M.M.; Ngoepe, Phuti Ngako Mahloka (Trans Tech Publications, 2016)

Deep level transient spectroscopy (DLTS) was used to characterize the defects introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation conditions. This was done by heating a tungsten source ...
Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon

Danga, Helga Tariro; Auret, Francois Danie; Tunhuma, Shandirai Malven; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter Ernst (American Institute of Physics, 2019-06-03)

In this paper, we report on defects introduced in epitaxially grown n-type silicon (Si) during electron beam exposure. The defects observed were electrically characterized using deep-level transient spectroscopy (DLTS) ...

Search UPSpace