Trivalent atom defect-complex induced defect levels in germanium for enhanced Ge-based device performance

Trivalent atom defect-complex induced defect levels in germanium for enhanced Ge-based device performance

Igumbor, Emmanuel; Dongho-Nguimdo, Moise; Mapasha, Refilwe Edwin; Kalimuthu, Rajendran; Raji, Abdulrafiu; Meyer, Walter Ernst
URI: http://hdl.handle.net/2263/95093
Date: 2024-04

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