An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors

Allan, Lynet; Mulwa, Winfred M.; Mwabora, Julius M.; Musembi, Robinson J.; Mapasha, Refilwe Edwin

dc.contributor.author	Allan, Lynet
dc.contributor.author	Mulwa, Winfred M.
dc.contributor.author	Mwabora, Julius M.
dc.contributor.author	Musembi, Robinson J.
dc.contributor.author	Mapasha, Refilwe Edwin
dc.date.accessioned	2023-10-16T13:21:54Z
dc.date.available	2023-10-16T13:21:54Z
dc.date.issued	2023-08
dc.description	DATA AVAILABILITY STATEMENT : Data will be made available on request.	en_US
dc.description.abstract	Please read abstract in article.	en_US
dc.description.department	Physics	en_US
dc.description.sponsorship	Applied Sciences, Engineering, and Technology (PASET); The Centre for High Performance Computing (CHPC); University of Pretoria.	en_US
dc.description.uri	https://www.cell.com/heliyon/home	en_US
dc.identifier.citation	Allan, L., Mulwa, W.M., Mwabora, J.M. et al. 2023, 'An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors'. Heliyon, vol. 9, no. 8, art. e18531, doi : 10.1016/j.heliyon.2023.e18531.	en_US
dc.identifier.issn	2405-8440 (online)
dc.identifier.other	10.1016/j.heliyon.2023.e18531
dc.identifier.uri	http://hdl.handle.net/2263/92904
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	© 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license.	en_US
dc.subject	First principles	en_US
dc.subject	Electronic	en_US
dc.subject	Mechanical	en_US
dc.subject	Optical and thermoelectric properties	en_US
dc.subject	Half-Heusler alloys	en_US
dc.subject	ZrCoY (Y = Sb and Bi)	en_US
dc.title	An ab-initio study of P-type ZrCoY (Y[dbnd]Sb and Bi) half – Heusler semiconductors	en_US
dc.type	Article	en_US