Electrical characterization of defects introduced during metallization processes in n-type germanium

Abstract

We have studied the defects introduced in n-type Ge during electron beam deposition (EBD) and sputter deposition (SD) by deep-level transient spectroscopy (DLTS) and evaluated their infleunce on the rectification quality of Schottky contracts by current-voltage (I=V) measurements. I=V measurements demonstrated that the quality of sputter-deposited diodes are poorer than those of diodes formed by EBD. The highest quality Schottky diodes were formed by resistive evaporation that introduced no defects in Ge. In the case of EBD of metals the main defect introduced during metallization was the V=Sb complex, also introduced during by electron irradiation. The concentrations of the EBD-induced defects depend on the metal used: metals that required a higher electron beam intensity to evaporate, e.g. Ru, resulted in larger defect concentrations than metals requiring lower electron beam intensity, e.g. Au. All the EBD-induced defects can be removed by annealing at temperatures above 325º C. Sputter deposition introduces several electronically active defects near the surface of Ge. All these defects have also been observed after high-energy electron irradiation. However, the V=Sb centre introduced by EBD was not observed after sputter deposition. Annealing at 250º C in Ar removed all the defects introduced during sputter deposition.