dc.contributor.author |
Abdalla, Zaki Adam Yousif
|
|
dc.contributor.author |
Ismail, Mahjoub Yagoub Abdalla
|
|
dc.contributor.author |
Njoroge, Eric Gitau
|
|
dc.contributor.author |
Wendler, E.
|
|
dc.contributor.author |
Malherbe, Johan B.
|
|
dc.contributor.author |
Hlatshwayo, Thulani Thokozani
|
|
dc.date.accessioned |
2022-07-18T10:25:30Z |
|
dc.date.available |
2022-07-18T10:25:30Z |
|
dc.date.issued |
2021-01 |
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dc.description.abstract |
P'lease read abstract in the article. |
en_US |
dc.description.department |
Physics |
en_US |
dc.description.librarian |
hj2022 |
en_US |
dc.description.sponsorship |
The National Research Foundation and The World Academy of Science. |
en_US |
dc.description.uri |
http://www.elsevier.com/locate/nimb |
en_US |
dc.identifier.citation |
Abdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2021, 'Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, doi : 10.1016/j.nimb.2020.08.022. |
en_US |
dc.identifier.issn |
0168-583X (print) |
|
dc.identifier.issn |
1872-9584 (online) |
|
dc.identifier.other |
10.1016/j.nimb.2020.08.022 |
|
dc.identifier.uri |
https://repository.up.ac.za/handle/2263/86283 |
|
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier |
en_US |
dc.rights |
© 2021 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, 2021. doi : 10.1016/j.nimb.2020.08.022. |
en_US |
dc.subject |
Ion implantation |
en_US |
dc.subject |
Polycrystalline SiC |
en_US |
dc.subject |
Recrystallization |
en_US |
dc.subject |
Diffusion |
en_US |
dc.subject |
Silicon carbide (SiC) |
en_US |
dc.title |
Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC |
en_US |
dc.type |
Postprint Article |
en_US |