Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

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dc.contributor.author Abdalla, Zaki Adam Yousif
dc.contributor.author Ismail, Mahjoub Yagoub Abdalla
dc.contributor.author Njoroge, Eric Gitau
dc.contributor.author Wendler, E.
dc.contributor.author Malherbe, Johan B.
dc.contributor.author Hlatshwayo, Thulani Thokozani
dc.date.accessioned 2022-07-18T10:25:30Z
dc.date.available 2022-07-18T10:25:30Z
dc.date.issued 2021-01
dc.description.abstract P'lease read abstract in the article. en_US
dc.description.department Physics en_US
dc.description.librarian hj2022 en_US
dc.description.sponsorship The National Research Foundation and The World Academy of Science. en_US
dc.description.uri http://www.elsevier.com/locate/nimb en_US
dc.identifier.citation Abdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2021, 'Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, doi : 10.1016/j.nimb.2020.08.022. en_US
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2020.08.022
dc.identifier.uri https://repository.up.ac.za/handle/2263/86283
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2021 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, 2021. doi : 10.1016/j.nimb.2020.08.022. en_US
dc.subject Ion implantation en_US
dc.subject Polycrystalline SiC en_US
dc.subject Recrystallization en_US
dc.subject Diffusion en_US
dc.subject Silicon carbide (SiC) en_US
dc.title Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC en_US
dc.type Postprint Article en_US


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