Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, Refilwe Edwin; Omotoso, E.; Meyer, Walter Ernst

dc.contributor.author	Igumbor, E.
dc.contributor.author	Dongho-Nguimdo, G.M.
dc.contributor.author	Mapasha, Refilwe Edwin
dc.contributor.author	Omotoso, E.
dc.contributor.author	Meyer, Walter Ernst
dc.date.accessioned	2021-11-24T07:13:18Z
dc.date.available	2021-11-24T07:13:18Z
dc.date.issued	2020-07
dc.description.abstract	Please read the abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.librarian	hj2021	en_ZA
dc.description.sponsorship	The National Research foundation (NRF) of South Africa, the University of South Africa (UNISA) and the Center for High Performance Computing (CHPC) Cape Town.	en_ZA
dc.description.uri	http://www.elsevier.com/locate/jpcs	en_ZA
dc.identifier.citation	Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. 2020, 'Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC', Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6.	en_ZA
dc.identifier.issn	0022-3697 (print)
dc.identifier.issn	1879-2553 (online)
dc.identifier.other	10.1016/j.jpcs.2020.109448
dc.identifier.uri	http://hdl.handle.net/2263/82814
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Journal of Physics and Chemistry of Solids. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6, 2020. doi : 10.1016/j.jpcs.2020.109448.	en_ZA
dc.subject	Defect	en_ZA
dc.subject	Formation energy	en_ZA
dc.subject	Charge state	en_ZA
dc.subject	Substitution pair	en_ZA
dc.title	Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC	en_ZA
dc.type	Postprint Article	en_ZA