Investigating the structural changes induced by SHI on W–SiC samples

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dc.contributor.author Thabethe, Thabsile Theodora
dc.contributor.author Ntsoane, Tshepo Paul
dc.contributor.author Biira, Saphina
dc.contributor.author Njoroge, Eric Gitau
dc.contributor.author Hlatshwayo, Thulani Thokozani
dc.contributor.author Skuratov, Vladimir Alexeevich
dc.contributor.author Malherbe, Johan B.
dc.date.accessioned 2020-04-07T11:51:42Z
dc.date.issued 2020-04
dc.description.abstract Please read abstract in the article. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2021-04-01
dc.description.librarian hj2020 en_ZA
dc.description.sponsorship The National Research Foundation (NRF) of South Africa en_ZA
dc.description.uri http://www.journals.elsevier.com/vacuum en_ZA
dc.identifier.citation Thabethe, T.T., Ntsoane, T.P., Biira, S. et al. 2020, 'Investigating the structural changes induced by SHI on W–SiC samples', Vacuum, vol. 174, art. 109230, pp. 1-5. en_ZA
dc.identifier.issn 0042-207X (print)
dc.identifier.issn 1879-2715 (online)
dc.identifier.other 10.1016/j.vacuum.2020.109230
dc.identifier.uri http://hdl.handle.net/2263/74075
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Vacuum. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Vacuum, vol. 174, art. 109230, pp. 1-5, 2020. doi : 10.1016/j.vacuum.2020.109230. en_ZA
dc.subject Swift heavy ion (SHI) en_ZA
dc.subject Rutherford backscattering spectrometry (RBS) en_ZA
dc.subject Scanning electron microscopy (SEM) en_ZA
dc.subject X-ray diffraction (XRD) en_ZA
dc.subject Tungsten en_ZA
dc.subject Thin film en_ZA
dc.subject Reaction en_ZA
dc.subject Irradiation en_ZA
dc.subject Metal-silicon carbide (m-SiC) en_ZA
dc.title Investigating the structural changes induced by SHI on W–SiC samples en_ZA
dc.type Postprint Article en_ZA


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