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| dc.contributor.author | Abdalla, Zaki Adam Yousif
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| dc.contributor.author | Ismail, Mahjoub Yagoub Abdalla
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| dc.contributor.author | Njoroge, Eric Gitau
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| dc.contributor.author | Hlatshwayo, Thulani Thokozani
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| dc.contributor.author | Wendler Elke
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| dc.contributor.author | Malherbe, Johan B.
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| dc.date.accessioned | 2020-04-02T08:06:54Z | |
| dc.date.issued | 2020-05 | |
| dc.description.abstract | Please read abstract in the article. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.embargo | 2021-05-01 | |
| dc.description.librarian | hj2020 | en_ZA |
| dc.description.sponsorship | The National Research Foundation and The World Academy of Science. | en_ZA |
| dc.description.uri | http://www.journals.elsevier.com/vacuum | en_ZA |
| dc.identifier.citation | Abdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2020, 'Migration behaviour of selenium implanted into polycrystalline 3C–SiC', Vacuum, vol. 175, art. 109235, pp. 1-6. | en_ZA |
| dc.identifier.issn | 0042-207X (print) | |
| dc.identifier.issn | 1879-2715 (online) | |
| dc.identifier.other | 10.1016/j.vacuum.2020.109235 | |
| dc.identifier.uri | http://hdl.handle.net/2263/73909 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Elsevier | en_ZA |
| dc.rights | © 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Vacuum. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Vacuum, vol. 175, art. 109235, pp. 1-6, 2020. doi : 10.1016/j.vacuum.2020.109235. | en_ZA |
| dc.subject | Diffusion | en_ZA |
| dc.subject | Polycrystalline | en_ZA |
| dc.subject | Silicon carbide (SiC) | en_ZA |
| dc.subject | Raman spectroscopy | en_ZA |
| dc.subject | Rutherford backscattering spectrometry (RBS) | en_ZA |
| dc.subject | Scanning electron microscopy (SEM) | en_ZA |
| dc.title | Migration behaviour of selenium implanted into polycrystalline 3C–SiC | en_ZA |
| dc.type | Postprint Article | en_ZA |
