Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon
Login
UPSpace Home
→
Natural and Agricultural Sciences
→
Physics
→
Research Articles (Physics)
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon
Abdurrazaq, Abdulgaffar
;
Raji, Abdulrafiu T.
;
Meyer, Walter Ernst
URI:
http://hdl.handle.net/2263/73832
Date:
2020-05
Abstract:
Please read abstract in the article.
Show full item record
Files in this item
Name:
Abdurrazaq_Ab_2020.pdf
Size:
1.292Mb
Format:
PDF
Description:
Preprint Article
View/
Open
This item appears in the following Collection(s)
Research Articles (Physics)
718
Research Articles (University of Pretoria)
37878
Search UPSpace
Search UPSpace
This Collection
Browse
All of UPSpace
Communities & Collections
Issue Date
Authors
Titles
Subjects
Supervisor
UP Author
UP Postgraduate
Type
This Collection
Issue Date
Authors
Titles
Subjects
Supervisor
UP Author
UP Postgraduate
Type
My Account
Login
Register
UPSpace Workspace