In situ study of low-temperature irradiation-induced defects in silicon carbide

Tunhuma, Shandirai Malven; Auret, Francois Danie; Danga, Helga Tariro; Nel, Jacqueline Margot; Diale, M. (Mmantsae Moche)

dc.contributor.author	Tunhuma, Shandirai Malven
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Danga, Helga Tariro
dc.contributor.author	Nel, Jacqueline Margot
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.date.accessioned	2020-03-02T06:30:11Z
dc.date.issued	2019-06
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2020-03-22
dc.description.librarian	hj2020	en_ZA
dc.description.sponsorship	The National Research Foundation (NRF) (Grant No. 11174) and the University of Pretoria.	en_ZA
dc.description.uri	http://link.springer.com/journal/11664	en_ZA
dc.identifier.citation	Tunhuma, S.M., Auret, F.D., Danga, H.T. et al. In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide. Journal of Electronic Materials 48, 3849–3853 (2019). https://doi.org/10.1007/s11664-019-07145-2.	en_ZA
dc.identifier.issn	0361-5235 (print)
dc.identifier.issn	1543-186X (online)
dc.identifier.other	10.1007/s11664-019-07145-2
dc.identifier.uri	http://hdl.handle.net/2263/73616
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© 2019 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664.	en_ZA
dc.subject	Native defects	en_ZA
dc.subject	Low-temperature irradiation	en_ZA
dc.subject	4H-SiC	en_ZA
dc.subject	Deep-level transient spectroscopy (DLTS)	en_ZA
dc.subject	Silicon carbide (SiC)	en_ZA
dc.title	In situ study of low-temperature irradiation-induced defects in silicon carbide	en_ZA
dc.type	Postprint Article	en_ZA