Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications
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| dc.contributor.author | Venter, J.J.P. (Johannes)
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| dc.contributor.author | Sinha, Saurabh
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| dc.contributor.author | Lambrechts, Wynand
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| dc.date.accessioned | 2019-10-07T12:47:44Z | |
| dc.date.available | 2019-10-07T12:47:44Z | |
| dc.date.issued | 2018-11-08 | |
| dc.description.abstract | Please read abstract in the article. | en_ZA |
| dc.description.department | Electrical, Electronic and Computer Engineering | en_ZA |
| dc.description.librarian | am2019 | en_ZA |
| dc.description.uri | https://www.spiedigitallibrary.org/journals/Optical-Engineering | en_ZA |
| dc.identifier.citation | Johan Venter, Saurabh Sinha, Wynand Lambrechts, “Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications,” Opt. Eng. 57(11), 117104 (2018), DOI: 10.1117/1.OE.57.11.117104. | en_ZA |
| dc.identifier.issn | 0091-3286 (print) | |
| dc.identifier.issn | 1560-2303 (online) | |
| dc.identifier.other | 10.1117/1.OE.57.11.117104 | |
| dc.identifier.uri | http://hdl.handle.net/2263/71593 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Society of Photo-optical Instrumentation Engineers | en_ZA |
| dc.rights | © 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) | en_ZA |
| dc.subject | Infrared radiation photodetectors | en_ZA |
| dc.subject | Circuit noise | en_ZA |
| dc.subject | Diode-connected transistor | en_ZA |
| dc.subject | Cryogenic operation | en_ZA |
| dc.subject | Heterojunction bipolar transistor (HBT) | en_ZA |
| dc.title | Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications | en_ZA |
| dc.type | Article | en_ZA |
