Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications
Login
UPSpace Home
→
Engineering, Built Environment and Information Technology
→
Electrical, Electronic and Computer Engineering
→
Research Articles (Electrical, Electronic and Computer Engineering)
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications
Venter, J.J.P. (Johannes)
;
Sinha, Saurabh
;
Lambrechts, Wynand
URI:
http://hdl.handle.net/2263/71593
Date:
2018-11-08
Abstract:
Please read abstract in the article.
Show full item record
Files in this item
Name:
Venter_Characteri ...
Size:
1021.Kb
Format:
PDF
Description:
Article
View/
Open
This item appears in the following Collection(s)
Research Articles (Electrical, Electronic and Computer Engineering)
934
Research Articles (University of Pretoria)
37878
Search UPSpace
Search UPSpace
This Collection
Browse
All of UPSpace
Communities & Collections
Issue Date
Authors
Titles
Subjects
Supervisor
UP Author
UP Postgraduate
Type
This Collection
Issue Date
Authors
Titles
Subjects
Supervisor
UP Author
UP Postgraduate
Type
My Account
Login
Register
UPSpace Workspace