Defect levels induced by double substitution of B and N in 4H-SiC

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dc.contributor.author Igumbor, Emmanuel
dc.contributor.author Danga, Helga Tariro
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Meyer, Walter Ernst
dc.date.accessioned 2019-06-26T07:19:58Z
dc.date.issued 2019-03
dc.description.abstract Please read abstract in the article. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2020-03-01
dc.description.librarian hj2019 en_ZA
dc.description.sponsorship The National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). Emmanuel Igumbor acknowledge the University of South Africa for financial support through the Postdoctoral Research Fellowship programme. en_ZA
dc.description.uri http://www.elsevier.com/locate/nimb en_ZA
dc.identifier.citation Igumbor, E., Danga, H.T., Omotoso, E. et al. 2019, 'Defect levels induced by double substitution of B and N in 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46. en_ZA
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2019.01.014
dc.identifier.uri http://hdl.handle.net/2263/70300
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46, 2019. doi : 10.1016/j.nimb.2019.01.014. en_ZA
dc.subject Charge state en_ZA
dc.subject Defect en_ZA
dc.subject Uranium compounds en_ZA
dc.subject Substitutional impurities en_ZA
dc.subject Hybrid functional en_ZA
dc.subject Formation energy en_ZA
dc.subject Substitution en_ZA
dc.subject Equilibrium conditions en_ZA
dc.subject Electrically active defects en_ZA
dc.subject Double substitution en_ZA
dc.subject Conduction-band minimum en_ZA
dc.subject Substitution reactions en_ZA
dc.subject Silicon compounds en_ZA
dc.subject Silicon carbide en_ZA
dc.subject Energy gap en_ZA
dc.title Defect levels induced by double substitution of B and N in 4H-SiC en_ZA
dc.type Postprint Article en_ZA


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