Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, Refilwe Edwin; Meyer, Walter Ernst

dc.contributor.author	Igumbor, E.
dc.contributor.author	Dongho-Nguimdo, G.M.
dc.contributor.author	Mapasha, Refilwe Edwin
dc.contributor.author	Meyer, Walter Ernst
dc.date.accessioned	2019-06-25T14:27:54Z
dc.date.issued	2019-08
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2020-08-01
dc.description.librarian	hj2019	en_ZA
dc.description.sponsorship	This work is based on the research supported partly by National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).	en_ZA
dc.description.uri	http://link.springer.com/journal/10853	en_ZA
dc.identifier.citation	Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge. Journal of Materials Science (2019) 54: 10798-10808. https://doi.org/10.1007/s10853-019-03627-0.	en_ZA
dc.identifier.issn	0022-2461 (print)
dc.identifier.issn	1573-4803 (online)
dc.identifier.other	10.1007/s10853-019-03627-0
dc.identifier.uri	http://hdl.handle.net/2263/70299
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© Springer Science+Business Media, LLC, part of Springer Nature 2019. The original publication is available at : http://link.springer.comjournal/10853.	en_ZA
dc.subject	Hybrid density functional theory	en_ZA
dc.subject	Hybrid functional calculation	en_ZA
dc.subject	Ab-initio	en_ZA
dc.subject	Germanium (Ge)	en_ZA
dc.subject	Electronic properties	en_ZA
dc.subject	Defect levels	en_ZA
dc.subject	Group III substitution	en_ZA
dc.title	Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge	en_ZA
dc.type	Postprint Article	en_ZA