Characterisation of Cs ion implanted GaN by DLTS

Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Auret, Francois Danie; Omotoso, Ezekiel; Hlatshwayo, Thulani Thokozani; Diale, M. (Mmantsae Moche)

dc.contributor.author	Ngoepe, Phuti Ngako Mahloka
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Hlatshwayo, Thulani Thokozani
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.date.accessioned	2019-01-24T11:37:40Z
dc.date.issued	2018-04
dc.description.abstract	Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10–11 cm−2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10–15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2019-04-15
dc.description.librarian	hj2019	en_ZA
dc.description.sponsorship	The National Research Foundation of South Africa (Grant No. 98961).	en_ZA
dc.description.uri	http://www.elsevier.com/locate/physb	en_ZA
dc.identifier.citation	Ngoepe, P.N.M., Meyer, W.E., Auret, F.D. et al. 2018, 'Characterisation of Cs ion implanted GaN by DLTS', Physica B : Condensed Matter, vol. 535, pp. 96-98.	en_ZA
dc.identifier.issn	0921-4526 (print)
dc.identifier.issn	1873-2135 (online)
dc.identifier.other	10.1016/j.physb.2017.06.064
dc.identifier.uri	http://hdl.handle.net/2263/68234
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2017 Published by Elsevier B.V. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 535, pp. 96-98, 2018. doi : 10.1016/j.physb.2017.06.064.	en_ZA
dc.subject	Deep level transient spectroscopy (DLTS)	en_ZA
dc.subject	Hydride vapour phase epitaxy (HVPE)	en_ZA
dc.subject	Gallium nitride (GaN)	en_ZA
dc.subject	Defect	en_ZA
dc.subject	Cs implantation	en_ZA
dc.title	Characterisation of Cs ion implanted GaN by DLTS	en_ZA
dc.type	Postprint Article	en_ZA