Migration behaviour of Europium implanted into single crystalline 6H-SiC

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dc.contributor.advisor Hlatshwayo, Thulani Thokozani
dc.contributor.coadvisor Malherbe, Johan B.
dc.contributor.postgraduate Mohlala, Tshegofatso Magapeletse
dc.date.accessioned 2018-07-25T09:00:54Z
dc.date.available 2018-07-25T09:00:54Z
dc.date.created 2018/04/18
dc.date.issued 2017
dc.description Dissertation (MSc)--University of Pretoria, 2017.
dc.description.abstract The release of radioactive fission products during nuclear energy reactor operation imposes a serious danger to personnel’s health and the environment. In a modern Pebble Bed Modular Reactor (PBMR) TristructuralIsotropic (TRISO) fuel, silicon carbide (SiC) is used as the main barrier to fission products (FPs). TRISO particles retain most of the FPs well with the exception of silver (Ag), strontium (Sr) and Europium (Eu) during operation. The migration behavior of Ag in SiC has been thoroughly investigated over decades with fewer investigations done on the migration behavior of Sr and Eu. In this study the migration behavior of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford backscattering spectrometry (RBS), RBS in a channeling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600°C to a fluence of 1×1016 cm-2. This high temperature was chosen because PBMR reactors are designed to operate at high temperatures. The implanted samples were sequentially annealed at temperatures ranging from 1000 to 1400 °C, in steps of 100 °C for 5 hours. RBS-C showed that implantation of Eu into 6H-SiC at 600 °C retained crystallinity with some radiation damage. Reduction of the radiation damage retained after implantation, already took place after annealing at 1000 °C. This annealing of radiation damage progressed with increasing annealing temperature up to 1400 °C. A shift of Eu towards the surface took place after annealing at 1000 °C. This shift became more pronounced and was accompanied by loss of Eu from the surface at annealing temperatures >1000 °C. This shift was accompanied by broadening of Eu peak, indicating Fickian diffusion occurring after annealing at temperatures > 1100 °C. The migration of Eu occurring concurrently with the annealing of radiation damage was explained by trapping and de-trapping of Eu by radiation damage. The diffusion coefficients were found to be 1.56× 10- 18 m2s-1 and 2.98× 10-18m2s-1at 1200 °C and 1300 °C respectively.
dc.description.availability Unrestricted
dc.description.degree MSc
dc.description.department Physics
dc.identifier.citation Mohlala, TM 2017, Migration behaviour of Europium implanted into single crystalline 6H-SiC, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/65916>
dc.identifier.other A2018
dc.identifier.uri http://hdl.handle.net/2263/65916
dc.language.iso en
dc.publisher University of Pretoria
dc.rights © 2018 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
dc.subject UCTD
dc.title Migration behaviour of Europium implanted into single crystalline 6H-SiC
dc.type Dissertation


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