dc.contributor.author |
Omotoso, Ezekiel
|
|
dc.contributor.author |
Meyer, Walter Ernst
|
|
dc.contributor.author |
Janse van Rensburg, Pieter Johan
|
|
dc.contributor.author |
Igumbor, Emmanuel
|
|
dc.contributor.author |
Tunhuma, Shandirai Malven
|
|
dc.contributor.author |
Ngoepe, Phuti Ngako Mahloka
|
|
dc.contributor.author |
Danga, Helga Tariro
|
|
dc.contributor.author |
Auret, Francois Danie
|
|
dc.date.accessioned |
2017-11-10T08:42:54Z |
|
dc.date.issued |
2017-10 |
|
dc.description.abstract |
Please read abstract in the article. |
en_ZA |
dc.description.department |
Physics |
en_ZA |
dc.description.embargo |
2018-10-15 |
|
dc.description.librarian |
hj2017 |
en_ZA |
dc.description.sponsorship |
The University of Pretoria and the National Research Foundation (NRF) of South Africa, Grant number 98961. |
en_ZA |
dc.description.uri |
http://www.elsevier.com/locate/nimb |
en_ZA |
dc.identifier.citation |
Omotoso, E., Meyer, W E., Janse van Rensburg, P.J. et al. 2017, 'The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 241-245. |
en_ZA |
dc.identifier.issn |
0168-583X (print) |
|
dc.identifier.issn |
1872-9584 (online) |
|
dc.identifier.other |
10.1016/j.nimb.2017.05.055 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/63092 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Elsevier |
en_ZA |
dc.rights |
© 2017 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 409, pp. 241-245, 2017. doi : 10.1016/j.nimb.2017.05.055. |
en_ZA |
dc.subject |
Schottky barrier diode (SBD) |
en_ZA |
dc.subject |
4H-SiC |
en_ZA |
dc.subject |
Proton irradiation |
en_ZA |
dc.subject |
Richardson constant |
en_ZA |
dc.subject |
Schottky barrier height (SBH) |
en_ZA |
dc.subject |
Silicon |
en_ZA |
dc.subject |
Contacts |
en_ZA |
dc.subject |
Transport |
en_ZA |
dc.subject |
Detectors |
en_ZA |
dc.subject |
Temperatures |
en_ZA |
dc.subject |
Heights |
en_ZA |
dc.subject |
Inhomogeneities |
en_ZA |
dc.subject |
I-V characteristics |
en_ZA |
dc.subject |
Alpha-particle irradiation |
en_ZA |
dc.subject |
Double Gaussian distribution |
en_ZA |
dc.title |
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes |
en_ZA |
dc.type |
Postprint Article |
en_ZA |