dc.contributor.author |
Xu, X.
|
|
dc.contributor.author |
Iyer, V.
|
|
dc.contributor.author |
Wang, Y.
|
|
dc.contributor.author |
Guo, L.
|
|
dc.contributor.author |
Yao, Q.
|
|
dc.date.accessioned |
2017-08-04T07:08:35Z |
|
dc.date.available |
2017-08-04T07:08:35Z |
|
dc.date.issued |
2016 |
|
dc.description |
Papers presented to the 12th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics, Costa de Sol, Spain on 11-13 July 2016. |
en_ZA |
dc.description.abstract |
We use ultrafast spectroscopy to investigate a number of
ultrafast thermal transport processes, and this paper is intended
to provide a review of two applications of the method: one on
direct probing of the atomic vibrations in thermoelectric
materials; the other on the thermal transport across metaldielectric
interface. Atomic vibrational behaviors in
thermoelectric materials are important for thermoelectric
energy conversion. In misch-metal (Mm) filled (p-type) and
single (La, Ba, or Yb) filled (n-type) antimony skutterudites, a
high temperature thermoelectric materials for waste heat
recovery, different filling species cause coupled vibrational
modes between the guest atoms and the host lattice at different
frequencies, which scatter phonons in different spectral spans
and help to lower the lattice thermal conductivity and improve
the thermoelectric figure of merit. The scattering processes of
the different filling species are probed using ultrafast
spectroscopy. Furthermore, using the Debye model for the
measured lattice thermal conductivity together with the
measured vibration frequencies and scattering rates, it is shown
that the scattering due to the coupled vibrational modes has a
considerable contribution to the suppression of lattice thermal
conduction. Heat transfer processes at an interface between two
materials are also of importance in many electronic devices.
The electron-phonon coupling at a metal-dielectric interface is
studied using the ultrafast spectroscopy, on the samples of gold
thin films on silicon substrates. The two-temperature model is
used to obtain the electron-phonon interface resistance or
conductance at the gold-silicon interface, which quantifies the
direct metal electron to dielectric phonon coupling strength.
The effects of film thickness and probing wavelength are
investigated in detail along with a Drude-Lorentz model to
obtain a good estimate of interface thermal
resistance/conductance. This work demonstrates the ultrafast
spectroscopy as a powerful technique for thermal transport
research. |
en_ZA |
dc.format.medium |
PDF |
en_ZA |
dc.identifier.uri |
http://hdl.handle.net/2263/61575 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics |
en_ZA |
dc.rights |
University of Pretoria |
en_ZA |
dc.subject |
Thermal transport |
en_ZA |
dc.subject |
Energy conversion |
en_ZA |
dc.title |
Ultrafast spectroscopy of thermal transport and energy conversion |
en_ZA |
dc.type |
Presentation |
en_ZA |