DLTS characterization of defects in GaN induced by electron beam exposure

Ngoepe, Phuti Ngako Mahloka; Meyer, Walter Ernst; Auret, Francois Danie; Omotoso, Ezekiel; Diale, M. (Mmantsae Moche)

dc.contributor.author	Ngoepe, Phuti Ngako Mahloka
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.date.accessioned	2017-04-06T08:11:26Z
dc.date.issued	2017-06
dc.description.abstract	The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and capture cross section of 8.0 × 10-16 cm2 was induced by the exposure. The defect was similar to defects induced by other irradiation techniques such as proton, electron, and gamma irradiation. In comparison to GaN, the EBE induced defects in other materials such as Si and SiC are similar to those induced by other irradiation methods.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2018-06-30
dc.description.librarian	hb2017	en_ZA
dc.description.sponsorship	The South African National Research Foundation (NRF)	en_ZA
dc.description.uri	http://www.elsevier.com/locate/mssp	en_ZA
dc.identifier.citation	Ngoepe, PNM, Meyer, WE, Auret, FD, Omotoso, E & Diale, M 2017, 'DLTS characterization of defects in GaN induced by electron beam exposure', Materials Science in Semiconductor Processing, vol. 64, pp. 29-31.	en_ZA
dc.identifier.issn	1369-8001 (print)
dc.identifier.issn	1873-4081 (online)
dc.identifier.other	10.1016/j.mssp.2017.03.008
dc.identifier.uri	http://hdl.handle.net/2263/59675
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2017 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 64, pp. 29-31, 2017. doi : 10.1016/j.mssp.2017.03.008.	en_ZA
dc.subject	GaN	en_ZA
dc.subject	Defect	en_ZA
dc.subject	Deep level transient spectroscopy (DLTS)	en_ZA
dc.subject	Electron beam exposure (EBE)	en_ZA
dc.title	DLTS characterization of defects in GaN induced by electron beam exposure	en_ZA
dc.type	Postprint Article	en_ZA