Active enhanced tunable high-Q on-chip E-band resonator in commercial 130nm BiCMOS

We are excited to announce that the repository will soon undergo an upgrade, featuring a new look and feel along with several enhanced features to improve your experience. Please be on the lookout for further updates and announcements regarding the launch date. We appreciate your support and look forward to unveiling the improved platform soon.

Show simple item record

dc.contributor.other IEEE International Microwave and RF Conference (2015 : Hyderabad, India)
dc.contributor.upauthor Singh, Nishant
dc.contributor.upauthor Stander, Tinus
dc.date.accessioned 2016-02-24T14:25:18Z
dc.date.available 2016-02-24T14:25:18Z
dc.date.issued 2015-12
dc.description.abstract A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship National Research Foundation of South Africa (NRF) under Grants 92526 and 93921, as well as the UNESCO Participation Programme. en_ZA
dc.description.uri http://www.imarc-ieee.org en_ZA
dc.description.uri http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=36068 en_ZA
dc.identifier.citation Singh, N & Stander, T 2015, 'Active enhanced tunable high-Q on-chip E-band resonator in commercial 130nm BiCMOS', IEEE International Microwave and RF Conference (IMaRC), 10-12 Dec. 2015, Hyderabad, India, pp. 201-204. en_ZA
dc.identifier.isbn 978-1-5090-0156-9
dc.identifier.uri http://hdl.handle.net/2263/51525
dc.language.iso en en_ZA
dc.publisher Institute of Electrical and Electronics Engineers en_ZA
dc.rights © 2015 by IEEE en_ZA
dc.subject Millimeter wave integrated circuits en_ZA
dc.subject BiCMOS integrated circuits en_ZA
dc.subject Q measurement en_ZA
dc.subject Heterojunction bipolar transistor (HBT) en_ZA
dc.subject Resonators en_ZA
dc.title Active enhanced tunable high-Q on-chip E-band resonator in commercial 130nm BiCMOS en_ZA
dc.type Book en_ZA


Files in this item

This item appears in the following Collection(s)

Show simple item record