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dc.contributor.other | IEEE International Microwave and RF Conference (2015 : Hyderabad, India) | |
dc.contributor.upauthor | Singh, Nishant | |
dc.contributor.upauthor | Stander, Tinus | |
dc.date.accessioned | 2016-02-24T14:25:18Z | |
dc.date.available | 2016-02-24T14:25:18Z | |
dc.date.issued | 2015-12 | |
dc.description.abstract | A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states. | en_ZA |
dc.description.librarian | hb2015 | en_ZA |
dc.description.sponsorship | National Research Foundation of South Africa (NRF) under Grants 92526 and 93921, as well as the UNESCO Participation Programme. | en_ZA |
dc.description.uri | http://www.imarc-ieee.org | en_ZA |
dc.description.uri | http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=36068 | en_ZA |
dc.identifier.citation | Singh, N & Stander, T 2015, 'Active enhanced tunable high-Q on-chip E-band resonator in commercial 130nm BiCMOS', IEEE International Microwave and RF Conference (IMaRC), 10-12 Dec. 2015, Hyderabad, India, pp. 201-204. | en_ZA |
dc.identifier.isbn | 978-1-5090-0156-9 | |
dc.identifier.uri | http://hdl.handle.net/2263/51525 | |
dc.language.iso | en | en_ZA |
dc.publisher | Institute of Electrical and Electronics Engineers | en_ZA |
dc.rights | © 2015 by IEEE | en_ZA |
dc.subject | Millimeter wave integrated circuits | en_ZA |
dc.subject | BiCMOS integrated circuits | en_ZA |
dc.subject | Q measurement | en_ZA |
dc.subject | Heterojunction bipolar transistor (HBT) | en_ZA |
dc.subject | Resonators | en_ZA |
dc.title | Active enhanced tunable high-Q on-chip E-band resonator in commercial 130nm BiCMOS | en_ZA |
dc.type | Book | en_ZA |