Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing

Munthali, Kinnock V.; Theron, C.C. (Chris); Auret, Francois Danie; Coelho, Sergio M.M.; Njoroge, Eric Gitau

dc.contributor.author	Munthali, Kinnock V.
dc.contributor.author	Theron, C.C. (Chris)
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Njoroge, Eric Gitau
dc.date.accessioned	2016-02-12T09:30:32Z
dc.date.issued	2015-10
dc.description.abstract	Thin films of ruthenium-on-6-hexagonal silicon carbide (6H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temperatures. Some thin film samples were also analysed by scanning electron microscope (SEM). RBS analysis indicated minimal element diffusion, and formation of ruthenium oxide after annealing at 500 oC. Large scale diffusion of ruthenium (Ru) was observed to commence at 700 oC. The SEM images indicated that the as-deposited Ru was disorderly and amorphous. Annealing of the thin film improved the grain quality of Ru. The fabricated Ru-6H-SiC Schottky barrier diodes (SBD) with nickel ohmic contacts showed excellent rectifying behaviour and linear capacitance-voltage characteristics up to an annealing temperature of 900 oC. The SBDs degraded after annealing at 1000 oC. The degradation of the SBDs is attributed to the inter-diffusion of Ru and Si at the Schottky-substrate interface.	en_ZA
dc.description.embargo	2016-10-31
dc.description.librarian	hb2015	en_ZA
dc.description.uri	http://link.springer.com/journal/11664	en_ZA
dc.identifier.citation	Munthali, KV, Theron, C, Auret, FD, Coelho, SMM & Njoroge, E 2015, 'Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing', Journal of Electronic Materials, vol. 44, no. 10, pp. 3265-3271.	en_ZA
dc.identifier.issn	0361-5235 (print)
dc.identifier.issn	1543-186X (online)
dc.identifier.other	10.1007/s11664-015-3873-7
dc.identifier.uri	http://hdl.handle.net/2263/51342
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© 2015 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664.	en_ZA
dc.subject	Rutherford backscattering spectroscopy (RBS)	en_ZA
dc.subject	Scanning electron microscopy (SEM)	en_ZA
dc.subject	Diffusion	en_ZA
dc.subject	Schottky barrier diodes	en_ZA
dc.subject	Ruthenium	en_ZA
dc.subject	Ruthenium oxide	en_ZA
dc.subject	6H-SiC	en_ZA
dc.subject	Nickel (Ni)	en_ZA
dc.title	Solid state reaction and operational stability of ruthenium Schottky contact-on-6H-SiC under argon annealing	en_ZA
dc.type	Postprint Article	en_ZA