A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

Show simple item record

dc.contributor.author Reddy, Reeshen
dc.contributor.author Sinha, Saurabh
dc.date.accessioned 2015-10-01T10:05:38Z
dc.date.issued 2015-04
dc.description.abstract This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-channel metal-oxide semiconductor (NMOS) cascode and NMOS current source to overcome distortion by specifically enhancing the SFDR for high-speed DACs. The DAC is implemented using silicongermanium (SiGe) BiCMOS 130 nm technology and achieves a better than 21.96 dBc SFDR across the Nyquist band for a sampling rate of 500 MS/s with a core size of 0.1 mm2 and dissipates just 4 mW compared to other BiCMOS DACs that achieve similar SFDR performance with higher output voltages, resulting in a much larger power dissipation. en_ZA
dc.description.embargo 2016-04-30
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship Council for Scientific and Industrial Research. en_ZA
dc.description.uri http://www.elsevier.com/locate/mejo en_ZA
dc.identifier.citation Reddy, R & Sinha, S 2015, 'A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance', Microelectronics Journal, vol. 46, no. 4, pp. 310-319. en_ZA
dc.identifier.issn 0026-2692 (print)
dc.identifier.issn 1879-2391 (online)
dc.identifier.other 10.1016/j.mejo.2015.02.001
dc.identifier.uri http://hdl.handle.net/2263/50141
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2015 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Microelectronics Journal. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronics Journal, vol. 46, no. 4, pp. 310-319, 2015. doi :10.1016/j.mejo.2015.02.001. en_ZA
dc.subject BiCMOS integrated circuits en_ZA
dc.subject Dynamic range en_ZA
dc.subject Analogue-digital integrated circuits en_ZA
dc.subject Mixed analogue digital integrated circuits en_ZA
dc.subject Wideband en_ZA
dc.subject Digital-to-analogue converter (DAC) en_ZA
dc.subject Spurious free dynamic range (SFDR) en_ZA
dc.subject Negative-channel metal-oxide semiconductor (NMOS) en_ZA
dc.title A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance en_ZA
dc.type Postprint Article en_ZA


Files in this item

This item appears in the following Collection(s)

Show simple item record