We are excited to announce that the repository will soon undergo an upgrade, featuring a new look and feel along with several enhanced features to improve your experience. Please be on the lookout for further updates and announcements regarding the launch date. We appreciate your support and look forward to unveiling the improved platform soon.
dc.contributor.author | Auret, Francois Danie![]() |
|
dc.contributor.author | Goodman, Stewart Alexander![]() |
|
dc.contributor.author | Legodi, Matshisa Johannes![]() |
|
dc.contributor.author | Meyer, Walter Ernst![]() |
|
dc.contributor.author | Look, D.C.![]() |
|
dc.date.accessioned | 2007-08-15T05:54:29Z | |
dc.date.available | 2007-08-15T05:54:29Z | |
dc.date.issued | 2002-02-25 | |
dc.description | original file name: 02.02 | en |
dc.description.abstract | Gold Schottky-barrier diodes ~SBDs! were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now. | en |
dc.format.extent | 52903 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.citation | Auret, FD, Goodman, SA, Legodi, MJ, Meyer, WE, and Look, DC 2007, 'Electrical characterization of vapor phase grown single crystal ZnO', Appl. Phys. Lett., vol. 80, pp. 1340-1342. | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | 10.1063/1.1452781 | |
dc.identifier.uri | http://hdl.handle.net/2263/3292 | |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.rights | American Institute of Physics | en |
dc.subject | DLTS (Spectroscopy) | en |
dc.subject | Schottky-barrier diodes | en |
dc.subject.lcsh | Deep level transient spectroscopy | |
dc.subject.lcsh | Diodes, Schottky-barrier | |
dc.subject.lcsh | Diodes, Semiconductor | |
dc.title | Electrical characterization of vapor-phase-grown single-crystal ZnO | en |
dc.type | Article | en |