A study of amorphization energies in silicon for different implantation parameters

Friedland, Erich Karl Helmuth

dc.contributor.author	Friedland, Erich Karl Helmuth
dc.date.accessioned	2007-07-30T06:16:31Z
dc.date.available	2007-07-30T06:16:31Z
dc.date.issued	2007-03
dc.description.abstract	Please open article to read abstract	en
dc.description.sponsorship	The author would like to thank Prof. Werner Wesch and his group at the Friedrich-Schiller-Universität Jena for the carbon and argon implantations.	en
dc.format.extent	366516 bytes
dc.format.mimetype	application/pdf
dc.identifier.citation	Friedland, E 2007, ‘A study of amorphization energies in silicon for different implantation parameters’, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 256, issue 1, pp. 193-198 [http://www.sciencedirect.com/science/journal/0168583X]	en
dc.identifier.issn	0168-583X
dc.identifier.other	10.1016/j.nimb.2006.12.002
dc.identifier.uri	http://hdl.handle.net/2263/3188
dc.language.iso	en	en
dc.publisher	Elsevier	en
dc.rights	Elsevier	en
dc.subject	Amorphization	en
dc.subject	Damage profiles	en
dc.subject.lcsh	Ion implantation	en
dc.subject.lcsh	Silicon	en
dc.subject.lcsh	Channeling (Physics)	en
dc.title	A study of amorphization energies in silicon for different implantation parameters	en
dc.type	Postprint Article	en