The solid state interaction of palladium with SiC

Abstract

The solid-state interaction of palladium (Pd) with single crystal silicon carbide (6H- SiC) before and after annealing has been investigated using Rutherford backscattering spectrometry (RBS) in conjunction with RUMP simulation package, time-of-flight elastic recoil detector analysis (ToF-ERDA), glancing incident X-ray diffraction (GIXRD) and scanning electron microscopy (SEM). A thin layer of Pd (500 A) was deposited onto a clean 6H-SiC substrate at room temper- ature. The prepared difusion couples were then annealed in vacuum at different annealing temperatures for a maximum period of 1 h. The annealing temperature ranged from 2000C to 8000C. The composition of the as-deposited and the annealed samples was measured by using a He+ beam with an energy of 1.6 MeV. The ToF-ERDA measurements were per- formed on the as-deposited sample by using a high energy copper beam (about 30 MeV) for elemental depth distribution. The GIXRD measurements performed on the samples were able to identify the phases that form before and after annealing. The SEM micrograph obtained during this study gave some insight on the surface morphology of the samples before and after annealing. Our results obtained during this study showed that Pd reacts with SiC after annealing at 4000C resulting in the formation of metal-rich silicides and some unreacted Pd. Annealing at higher temperatures (5000C and 6000C) produced metal-rich silicides, which continued to grow until all the Pd has been consumed. Annealing at even higher temperatures (7000C and 8000C), the metal-rich silicides disappear and the silicon rich silicides start appearing. These appear by simply consuming the metal-rich silicides, resulting in the formation of two or more phases. The behaviour of the interaction between Pd with 6H-SiC is different than the Pd-Si system. The reaction temperature of the Pd/SiC are much more higher than those of the Pd/Si system. That is, Pd reacts with Si at temperatures as low as 2500C, while it starts to react with SiC at an annealing temperature of 4000C. In addition to this silicides such as Pd9Si2, Pd4Si form at the initial reaction temperature followed by the formation of the Pd2Si phase at the temperatures above 6000C for the Pd/SiC system. Meanwhile in the Pd/Si system the Pd2Si phase remains stable even after annealing at 8000C. No carbon compounds were observed in the temperature range used in this study and the formation of silicides were found to be accompanied by the formation of free carbon which remained immobile in the system.