Surface roughness of InP after N+2 bombardment : Ion areic dose dependence

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dc.contributor.advisor Malherbe, Johan B. en
dc.contributor.coadvisor Van den Berg, Noelani en
dc.contributor.postgraduate Osman, Sarah Omer Siddig en
dc.date.accessioned 2013-09-06T18:03:35Z
dc.date.available 2005-05-20 en
dc.date.available 2013-09-06T18:03:35Z
dc.date.created 2004-09-01 en
dc.date.issued 2006-05-20 en
dc.date.submitted 2005-05-13 en
dc.description Dissertation (MSc (Physics))--University of Pretoria, 2006. en
dc.description.abstract Please read the abstract in the section front of this document. en
dc.description.availability unrestricted en
dc.description.department Physics en
dc.identifier.citation Osman, SOS 2004, Surface roughness of InP after N+2 bombardment: Ion areic dose dependence, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/24608 > en
dc.identifier.other H250/ag en
dc.identifier.upetdurl http://upetd.up.ac.za/thesis/available/etd-05132005-105139/ en
dc.identifier.uri http://hdl.handle.net/2263/24608
dc.language.iso en
dc.publisher University of Pretoria en_ZA
dc.rights © 2004, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. en
dc.subject Electronics materials en
dc.subject Indium compounds en
dc.subject Semiconducrtors en
dc.subject Surface roughness en
dc.subject Indium phosphide en
dc.subject UCTD en_US
dc.title Surface roughness of InP after N+2 bombardment : Ion areic dose dependence en
dc.type Dissertation en


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